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 HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Typical Applications
The HMC496LP3 / HMC496LP3E is suitable for various modulation systems: * Fixed Wireless or WLL * U-NII Radios * 802.11a & HiperLAN WLAN
Features
Wideband RF Frequency Range High Carrier Suppression: 34 dBc Very Low Noise Floor: -157 dBm/Hz Low LO Power: -3 to +6 dBm Differential or Single Ended LO Drive Single Low Current Supply: +3.0V@ 93 mA 3 x 3 mm QFN SMT Plastic Package
8
MODULATORS - SMT
* C-band Microwave Radios
Functional Diagram
General Description
The HMC496LP3 & HMC496LP3E are low noise Wideband Direct Quadrature Modulator RFICs which are ideal for digital modulation applications from 4.0 - 7.0 GHz including; WLL, U-NII, WLAN & microwave radios. Housed in a compact 3x3 mm (LP3) SMT QFN package, the RFIC requires minimal ex-ternal components & provides a low cost alternative to more complicated double upconversion architectures. The RF output port is matched to 50 Ohms with no external components. The LO requires -3 to +6 dBm and can be driven in either differential or singleended mode while the Baseband inputs will support modulation inputs from DC - 250 MHz typical. This device is optimized for a supply voltage of +3.0V@ 93 mA and will provide stable performance over a +2.7V to +3.3V range.
Electrical Specifications, See Test Conditions on following page herein.
Parameter Frequency Range, RF Output Power Output P1dB Output IP3 Output Noise Floor Carrier Suppression (uncalibrated) Sideband Suppression (uncalibrated) IM3 Suppression RF Port Return Loss LO Port Return Loss 15 -1 Min. Typ. 4.9 - 5.4 +2 3 18 -157 34 40 45 7 11 14 -1 Max. Min. Typ. 5.7 - 5.9 +2 4 17 -156 34 39 42 9 10 14 -2 Max. Min. Typ. 5.9 - 6.4 +1 4 17 -155 31 39 41 8 10 Max. Units GHz dBm dBm dBm dBm/Hz dBc dBc dBc dB dB
8 - 14
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Electrical Specifications, (continued)
Parameter RF Output RF Frequency Range RF Return Loss LO Input LO Frequency Range LO Input Power LO Port Return Loss Baseband Input Port Baseband Port Bandwidth Baseband Input DC Voltage (Vbbdc) Baseband Input DC Bias Current (Ibbdc) Baseband Input Capacitance DC Power Requirements Supply Voltage (Vcc) Supply Current (Icc) DC 1.0 1.3 32 0.8 250 1.6 MHz V A pF 4.0 -3 +3 10 7.0 +9 GHz dBm dB 4.0 8 7.0 GHz dB Conditions Min. Typ. Max. Units
8
MODULATORS - SMT
8 - 15
With 50 source & external 10 pF shunt cap to ground. Refer to HMC496LP3 Application Circuit. This parameter can be varied in order to optimize the device performance over temperature and/or supply. Single-ended Single-ended. De-embeded to the part pin. See Test Conditions Below
2.7
3.0 93
3.3
V mA
Test Conditions: Unless Otherwise Specified, the Following Test Conditions Were Used
Parameter Temperature Baseband Input Frequency Baseband Input DC Voltage (Vbbdc) Baseband Input AC Voltage (Peak to Peak Differential, I and Q) Condition +25 C 200 kHz 1.3V 1.2V 600 mV per tone @ 150 & 250 kHz 20 MHz +3.0V +3 dBm Single-Ended Refer to HMC496LP3 Application Schematic Herein Uncalibrated Differential
Baseband Input AC Voltage for OIP3 Measurement (Peak to Peak Differential, I and Q) Frequency Offset for Output Noise Measurements Supply & Bias Voltage (Vb1, Vb2, Vcc1, Vcc2) LO Input Power LO Input Mode Mounting Configuration Sideband & Carrier Suppression RF Output Mode
Calibrated vs. Uncalibrated Test Results During the Uncalibrated Sideband and Carrier Suppression tests, care is taken to ensure that the I/Q signal paths from the Vector Signal Generator (VSG) to the Device Under Test (DUT) are equal. The "Uncalibrated, +25 C" Sideband and Carrier Suppression plots were measured at room temperature, while the "Uncalibrated, over Temperature" Sideband and Carrier Suppression plots represent the worst case uncalibrated suppression levels measured at T= -40 C, +25 C, and +85 C. The "Calibrated, +25 C" Sideband Suppression data was plotted after a manual adjustment of the I/Q amplitude balance and I/Q phase offset (skew) at +25C, and an LO input power level of + 3 dBm. This adjustment setting was held constant during tests over LO input power level and temperature. The "Calibrated, over Temperature" plots represent the worst case calibrated Sideband Suppression levels at T= -40 C, +25 C, and +85 C. The "Calibrated, +25 C" Carrier Suppression data was plotted after a manual adjustment of the Ip/In & Qp/Qn DC offsets at +25 C, and an LO input power level of + 3 dBm. This adjustment setting was held constant during tests over LO input power level and temperature. The "Calibrated, over Temperature" plots represent the worst case Carrier Suppression levels measured at T= -40 C, +25 C, and +85 C. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Output Noise Floor and P1dB vs. Frequency
-120 -125 7 6 5 OUTPUT P1dB OUTPUT P1dB (dBm) 4 3 2 1 OUTPUT NOISE FLOOR 0 -1 -2 SET-UP NOISE FLOOR 4 4.5 5 5.5 6 FREQUENCY (GHz) 6.5 7 -3
Wideband Performance vs. Frequency
OUTPUT POWER (dBm), SIDEBAND SUPPR. (dBc), CARRIER SUPPR. (dBc), 3rd HARMONIC (dBc) 10 0
OUTPUT POWER
-130 NOISE (dBm/Hz) 7 -135 -140 -145 -150 -155 -160
-10 -20 -30 -40 -50 -60 4 4.5 5 5.5 6 6.5 FREQUENCY (GHz)
3rd HARMONIC CARRIER SUPPRESSION SIDEBAND SUPPRESSION
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MODULATORS - SMT
-165 -170
Output IP3 vs. Frequency
25
Return Loss
0
RETURN LOSS (dB)
OUTPUT IP3 (dBm)
20
-5
LOP SINGLE ENDED RFP SINGLE ENDED
15
-10
10
5 4 4.5 5 5.5 6 FREQUENCY (GHz) 6.5 7
-15 4 4.5 5 5.5 6 FREQUENCY (GHz) 6.5 7
8 - 16
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Output IP3 & Output Power vs. LO Power Over Supply@ 5200 MHz
20 15 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) 10 5 0 -5 -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
+2.7 V +3.0 V +3.3 V
Output IP3 & Output Power vs. LO Power Over Temperature@ 5200 MHz
20 15 OUTPUT IP3 (dBm) 10 5 0 -5 -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
+25 C +85 C -40 C
3 2 1 0 -1 -2 -3
3 2 OUTPUT POWER (dBm) 1 0 -1 -2 -3
8
MODULATORS - SMT
8 - 17
Output Noise vs. LO Power Over Temperature@ 5200 MHz
-140 OUTPUT NOISE FLOOR (dBm/Hz) -145 -150 -155 -160 -165 -170 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
+25 C +85 C -40 C
Output Noise vs. LO Power Over Supply@ 5200 MHz
-140 OUTPUT NOISE FLOOR (dBm/Hz) -145 -150 -155 -160 -165 -170 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
+2.7 V +3.0 V +3.3 V
Sideband Suppression* vs. LO Power@ 5200 MHz
-20 SIDEBAND SUPPRESSION (dBc)
UNCALIBRATED, +25C UNCALIBRATED, OVER TEMP
Carrier Suppression* vs. LO Power@ 5200 MHz
-20 CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
CALIBRATED, OVER TEMP CALIBRATED, +25C
-50
-60 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
-60 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
* See note regarding Calibrated vs. Uncalibrated test results herein.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Output IP3 & Output Power vs. LO Power Over Supply@ 5800 MHz
20 15 OUTPUT POWER (dBm) OUTPUT IP3 (dBm) 10 5 0 -5 -10 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
+2.7 V +3.0 V +3.3 V
Output IP3 & Output Power vs. LO Power Over Temperature@ 5800 MHz
20 15 OUTPUT IP3 (dBm) 10 5 0 -5
+25 C +85 C -40 C
4 3 2 1 0 -1 -2 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
4 3 OUTPUT POWER (dBm) 2 1 0 -1 -2
8
MODULATORS - SMT
-10
Output Noise vs. LO Power Over Temperature@ 5800 MHz
-140 OUTPUT NOISE FLOOR (dBm/Hz) -145 -150 -155 -160 -165 -170 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
+25 C +85 C -40 C
Output Noise vs. LO Power Over Supply@ 5800 MHz
-140 OUTPUT NOISE FLOOR (dBm/Hz) -145 -150 -155 -160 -165 -170 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
+2.7 V +3.0 V +3.3 V
Sideband Suppression* vs. LO Power@ 5800 MHz
-20 SIDEBAND SUPPRESSION (dBc)
Carrier Suppression* vs. LO Power@ 5800 MHz
-20 CARRIER SUPPRESSION (dBc)
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-30
-30
-40
-40
-50
UNCALIBRATED, +25C CALIBRATED, +25C UNCALIBRATED, OVER TEMP CALIBRATED, OVER TEMP
-50
-60 -3 -2 -1 0 1 2 3 4 5 LO POWER (dBm) 6 7 8 9
-60 -3 -2 -1 0 1 2 3 4 5 6 7 8 9 LO POWER (dBm)
8 - 18
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Absolute Maximum Ratings
Vcc LO Input Power Baseband Input Voltage (Reference to GND) Channel Temperature Continuous Pdiss (T = 85C) (Derate 110 mW/C above 85C) Thermal Resistance (Rth) (junction to lead) Storage Temperature Operating Temperature -0.5 to +6.0V +10 dBm -0.5 to +2.0V 150 C 7 Watts 9 C/Watt -40 to +150 C -40 to +85 C
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
8
MODULATORS - SMT
NOTES: 1. LEADFRAME MATERIAL: COPPER ALLOY 2. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 3. LEAD SPACING TOLERANCE IS NON-CUMULATIVE 4. PAD BURR LENGTH SHALL BE 0.15mm MAXIMUM. PAD BURR HEIGHT SHALL BE 0.05mm MAXIMUM. 5. PACKAGE WARP SHALL NOT EXCEED 0.05mm. 6. ALL GROUND LEADS AND GROUND PADDLE MUST BE SOLDERED TO PCB RF GROUND. 7. REFER TO HITTITE APPLICATION NOTE FOR SUGGESTED PCB LAND PATTERN.
Outline Drawing
Package Information
Part Number HMC496LP3 HMC496LP3E Package Body Material Low Stress Injection Molded Plastic RoHS-compliant Low Stress Injection Molded Plastic Lead Finish Sn/Pb Solder 100% matte Sn MSL Rating MSL1 MSL1
[1]
Package Marking [3] 496 XXXX 496 XXXX
[2]
[1] Max peak reflow temperature of 235 C [2] Max peak reflow temperature of 260 C [3] 4-Digit lot number XXXX
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 19
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Pin Descriptions
Pin Number 1, 4, 9, 12 Function GND Description These pins and the ground paddle must be connected to a high quality RF/DC ground. Interface Schematic
8
MODULATORS - SMT
2, 3
LOP, LON
Differential LO input ports. This device may be driven in either differential or single ended mode. In single ended mode, one port should be driven by the LO source while the other port may be terminated with a 50 resistor to ground.
5, 8, 13
N/C
No Connection required. These pins may be connected to RF/ DC ground without affecting performance. Differential Quadrature baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.2 - 1.4V. The nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the DC bias voltage on ports QN & QP, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 15 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level. RF Output port. This port is matched to 50 Ohms. A series capacitor should be connected to this port in order to prevent the DC supply voltage from appearing on the customer's PC board. Differential Quadrature baseband input. These are high impedance ports. The nominal recommended bias voltage is between 1.2 - 1.4V. The nominal recommended baseband input voltage is 1.2V peak to peak differential. By adjusting the DC bias voltage on ports IN & IP, the Carrier Suppression of the device can be optimized for a specific frequency band and LO power level. The typical offset voltage for optimization is less than 15 mV. The amplitude and phase difference between the I and Q inputs can be adjusted in order to optimize the Sideband Suppression for a specific frequency band and LO power level.
6, 7
QN, QP
10, 11
RFN, RFP
14, 15
IP, IN
16
VCC
Supply voltage. Set to 3.0V for nominal operation. The nominal current for this port is 93 mA.
8 - 20
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Evaluation PCB
8
MODULATORS - SMT
List of Materials for Evaluation PCB 107871
Item J1 - J8 J9 C1, C2, C5, C6 C9 C3, C4, C7, C8 C15 U1 PCB [2] Description PCB Mount SMA Connector DC Molex Connector 100 pF Chip Capacitor, 0402 Pkg. 10k pF Chip Capacitor, 0402 Pkg. 10 pF Chip Capacitor, 0402 Pkg. 4.7 uF, Case A, Tantulum HMC496LP3 / HMC496LP3E Modulator 107309 Eval Board [1]
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 ohm impedance while the package ground leads and exposed paddle should be connected directly to the ground plane similar to that shown. A sufficient number of VIA holes should be used to connect the top and bottom ground planes. The evaluation circuit board shown is available from Hittite upon request.
[1] Reference this number when ordering complete evaluation PCB [2] Circuit Board Material: Rogers 4350
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 21
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Application & Evaluation PCB Schematic
8
MODULATORS - SMT
Note: Baseband input frequency range is dependent on value of C3, C4, C7 and C8. The value of 10 pF was chosen to give a typical response of DC - 250 MHz. Input frequency range can be extended up to 1 GHz with possible degradation of LO leakage and broadband noise floor response by decreasing the value of C3, C4, C7 & C8.
8 - 22
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
HMC496LP3 / 496LP3E
v03.0206
SiGe WIDEBAND DIRECT MODULATOR RFIC, 4.0 - 7.0 GHz
Characterization Set-up
8
MODULATORS - SMT
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
8 - 23


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